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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. * High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 60 Vdc (Min) -- TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) -- TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) -- TIP122, TIP127 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc * Monolithic Construction with Built-In Base-Emitter Shunt Resistors * TO-220AB Compact Package *MAXIMUM RATINGS Rating TIP120, TIP125 60 60 TIP121, TIP126 80 80 TIP122, TIP127 100 100 TIP120* TIP121* TIP122* PNP TIP125* TIP126* TIP127* *Motorola Preferred Device NPN PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I II I III I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII III I I II I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII II I II I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I I II I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II I I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB VEB IC IB PD PD E Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 5.0 8.0 Collector Current -- Continuous Peak Base Current 120 mAdc Watts W/_C Watts W/_C mJ Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range 65 0.52 2.0 0.016 50 Unclamped Inductive Load Energy (1) TJ, Tstg - 65 to + 150 DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 - 100 VOLTS 65 WATTS _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC Thermal Resistance, Junction to Ambient RJA (1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 . Thermal Resistance, Junction to Case TA TC 4.0 80 1.92 62.5 _C/W _C/W CASE 221A-06 TO-220AB 3.0 60 TC 2.0 40 1.0 20 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 (1) Pulse Test: Pulse Width ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc) DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) CC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC SCOPE MSD6100 USED BELOW IB 100 mA v 300 s, Duty Cycle v 2%. Characteristic TUT t, TIME ( s) V2 approx + 8.0 V V1 approx -12 V 2 tr, tf 10 ns DUTY CYCLE = 1.0% 0 Figure 2. Switching Times Test Circuit 25 s 51 for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities. RB D1 + 4.0 V 8.0 k 120 V TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 0.1 0.07 0.05 0.1 0.3 0.2 0.7 0.5 1.0 2.0 5.0 3.0 Motorola Bipolar Power Transistor Device Data VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 ts VCEO(sus) td @ VBE(off) = 0 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) VCE(sat) VBE(on) Symbol ICBO ICEO IEBO Cob hFE hfe 1000 1000 Min 60 80 100 tf 4.0 -- -- -- -- -- -- -- -- -- -- -- -- PNP NPN Max 300 200 2.5 2.0 4.0 2.0 0.2 0.2 0.2 0.5 0.5 0.5 tr -- -- -- -- -- -- Figure 3. Switching Times 5.0 7.0 10 mAdc mAdc mAdc Unit Vdc Vdc Vdc pF -- -- TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.05 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k D = 0.5 0.2 0.1 ZJC(t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) P(pk) t2 DUTY CYCLE, D = t1/t2 t1 Figure 4. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 500 s dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED 1 ms @ TC = 25C (SINGLE PULSE) 5 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 100 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure 5. Active-Region Safe Operating Area 10,000 h fe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 300 TJ = 25C 200 C, CAPACITANCE (pF) Cob 100 70 50 PNP NPN 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Cib PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1 Figure 6. Small-Signal Current Gain Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 NPN TIP120, TIP121, TIP122 20,000 VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 TJ = 150C 25C - 55C hFE , DC CURRENT GAIN 10,000 7000 5000 3000 2000 1000 700 500 300 200 0.1 25C 20,000 VCE = 4.0 V PNP TIP125, TIP126, TIP127 TJ = 150C - 55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 2.2 1.8 1.8 1.4 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 Figure 9. Collector Saturation Region 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 3.0 TJ = 25C 2.5 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 1.5 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 1.0 0.5 0.1 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *TIP120/D* TIP120/D |
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